TOC
Control Devices
HIGH VOLTAGE PIN DIODES
DESCRIPTION
The GC4400 series are high voltage, high power (cath-
ode base) PIN diodes. These high resistivity silicon de-
vices are passivated with silicon dioxide for high stability
and reliability and have been proven by thousands of de-
vice hours in high reliability systems.
Each device can withstand storage temperatures from
-65擄 to +200擄C and will operate over the range from -55擄
to +150擄C. All devices meet or exceed military environ-
mental specifications of MIL-S-19500.
The GC4400 series will operate typically with +50 mA
forward bias. Breakdown voltages are available up to
1000 volts.
APPLICATIONS
The GC4400 series can be used in RF circuits as an on/off
element, as a switch, or as a current controlled resistor in
attenuators extending over the frequency range from
UHF through Ku band.
Switch applications include high speed switches (ECM
systems), TR or lobing switches, channel or antenna se-
lection switches (telecommunications), duplexers (ra-
dar) and digital phase shifters (phased arrays).
The GC4400 series can be used in RF circuits as an on/off
at moderate RF power levels.
Attenuator type applications include amplitude modulators,
AGC attenuators, power levelers and level set attenuators.
ELECTRICAL SPECIFICATIONS: T
A
= 25擄C
MODEL
NUMBER
BREAKDOWN VOLTAGE
(I
R
= 10
碌
A MAX)
V
B
(MIN)(Volts)
JUNCTION
CAPACITANCE
C
J
-50 (MAX)
(pF)
1
SERIES RESISTANCE
(100mA, 100 MHz)
R
S100
(MAX)
(Ohms)
2
CARRIER LIFETIME
(I
R
= 6mA, I
F
= 10mA)
T
L
(TYP)
(碌sec)
THERMAL RESISTANCE
(MAX)
(擄C/W)
GC4410
GC4411
GC4412
GC4413
100
100
100
100
300
300
300
300
1000
1000
1000
1000
1000
1000
0.10
0.25
0.50
0.75
0.10
0.25
0.50
0.75
0.10
0.25
0.50
0.75
1.3
2.5
0.6
0.5
0.4
0.3
1.5
1.2
1.0
0.8
1.5
1.2
1.0
0.8
.35
.3
.2
.5
.7
1.0
.5
1.0
1.5
2.0
1.0
2.0
3.0
5.0
6.0
7.5
40
25
20
10
40
30
20
10
30
25
20
10
7
5
!
GC4430
GC4431
GC4432
GC4433
!
GC4490
GC4491
GC4492
GC4493
!
GC4494
GC4495
Notes:
1. Capacitance is measured at 1 MHz and -50 volts.
2. Resistance is measured using transmission loss techniques.
3. These devices are not available in all case styles. Please consult the factory. specific package styles offered.
The tabulated specifications above are for case style 30.
Diodes are also available in various chip configurations.
Each type offers trade offs in series resistance, junction
capacitance, carrier lifetime and breakdown voltage; the
proper choice of which depends on the end application.
Reverse polarity diodes (NIP) and faster speed PIN and
NIP diodes are also available. (See data sheets for
GC4500, GC4200, and GC4300 series respectively.)
RATINGS
Maximum Leakage Current: 0.5碌A(chǔ) at 80% of minimum
rated breakdown
Operating Temperature:
Storage Temperature:
-55擄C to +150擄C
-65擄C to +200擄C
SEMICONDUCTOR OPERATION
75 T
echnology Drive 聲 Lowell, MA 01851 聲 T
el: 978-442-5600 聲 Fax: 978-937-3748
75
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