ISSUED DATE :2005/10/21
REVISED DATE :
GBC338
Description
NPN SILICON TRANSISTOR
The GBC338 is designed for drive and output-stages of audio amplifiers.
Features
&
DC Current Gain: 100~630 @V
CE
=1V, I
C
=100mA
High
Package Dimensions
D
&
Complementary
to GBC328
E
S1
TO-92
A
S E A T IN G
PLANE
b1
L
REF.
A
S
1
b
b
1
C
e1
e
b
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150
1.390
2.42
2.66
Absolute Maximum Ratings
(T
A
=25 : )
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (continuous)
Total Device Dissipation @ T
A
=25 :
Derate above 25 :
Total Device Dissipation @ T
C
=25 :
Derate above 25 :
Operating and Storage Junction Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
T
J
,
T
stg
R
JA
R
JC
Ratings
30
25
5
800
625
5.0
1.5
12
-55 ~ +150
200
83.3
Unit
V
V
V
mA
mW
mW/ :
W
mW/ :
:
: /W
: /W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Electrical Characteristics
(T
A
= 25 : unless otherwise noted)
Symbol
BV
CBO
BV
CEO
BV
CES
BV
EBO
I
CBO
I
CES
I
EBO
*V
CE(sat)
*V
BE(on)
*h
FE
1
*h
FE
2
fT
Cob
Min.
30
25
30
5
-
-
-
-
-
100
60
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
210
15
Max.
-
-
-
-
100
100
100
0.7
1.2
630
-
-
-
Unit
V
V
V
V
nA
nA
nA
V
V
Test Conditions
I
C
=100uA, I
E
=0
I
C
=10mA, I
B
=0
I
C
=100uA, I
E
=0
I
E
=10uA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=25V, V
BE
=0
V
EB
=4V, I
C
=0
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=300mA
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
V
CE
=5V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
380 s, Duty Cycle 2%
MHz
pF
Classification Of h
FE
1
Rank
Range
A
100 ~ 250
B
160 ~ 400
C
250 ~ 630
GBC338
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