G B AT 3 4
Description
Schottky Diode .
1/2
Package Dimensions
Style : Pin 1.Anode 2.Cathode 3.Common Connection
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
10 C
0C
Absolute Maximum Ratings
Parameter
Peak forward current
Recurrent Peak Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Forward Rectified Current
Peak Forward Surge Current at 1
Sec
Symbol
V
RRM
V
RMS
V
DC
Io
I
FSM
C
J
T
RR
T
J
Tstg
PD
Ratings
200
30
21
30
100
600
10
5.0
+150
-55 ~ +150
150
Unit
mA
V
V
V
mA
mA
pF
nSec
Typical Junction Capacitance between Terminal(note 1)
Reverse Recovery Time(Note 2)
Operating Temperature Range
Storage Temperature
Total Power Dissipation at Ta = 25 :
mW
Characteristics
at Ta = 25 :
Symbol
VF
IR
Min
-
-
Max.
1000
2.0
Unit
mV
uA
IF=100mA
VR=25V
Test Conditions
characteristics
Maximum Instantaneous Forward Voltage
Maximum Average Reverse Current
Note: 1.Measured at 1.0 MHz and applied reverse voltage of 1.0 volts.
2.Measured at applied forward current of 10 mA and reverse current of 10 mA.
3.ESD sensitive product handling required.
Characteristics Curve
1
2
