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GB50XF120K Datasheet

  • GB50XF120K

  • IGBT SIXPACK MODULE

  • 308.24KB

  • 8頁

  • IRF

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Bulletin PD - 94567 rev.B 08/03
GB50XF120K
IGBT SIXPACK MODULE
Features
聲 Low VCE (on) Non Punch Through IGBT Technology
聲 Low Diode VF
聲 10碌s Short Circuit Capability
聲 Square RBSOA
聲 HEXFRED Antiparallel Diode with Ultrasoft
Reverse Recovery Characteristics
聲 Positive V
CE
(on) Temperature Coefficient
聲 Ceramic DBC Substrate
聲 Low Stray Inductance Design
V
CES
= 1200V
I
C
= 50A @ T
C
=80擄C
t
sc
> 10碌s @ T
J
=150擄C
ECONO2 6PACK
V
CE(on)
typ. = 2.45V
Benefits
聲 Benchmark Efficiency for Motor Control
聲 Rugged Transient Performance
聲 Low EMI, Requires Less Snubbing
聲 Direct Mounting to Heatsink
聲 PCB Solderable Terminals
聲 Low Junction to Case Thermal Resistance
聲 UL Approved E78996
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ Tc=25擄C
I
C
@ Tc=80擄C
I
CM
I
LM
I
F
@ Tc=25擄C
I
F
@ Tc=80擄C
I
FM
V
GE
P
D
@ Tc=25擄C
P
D
@ Tc=80擄C
T
J
T
STG
V
ISOL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current (Ref. Fig. C.T.5)
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Pulsed Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (IGBT and Diode)
Maximum Power Dissipation (IGBT and Diode)
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Max.
1200
75
50
150
150
75
50
150
鹵20
329
184
150
-40 to +125
AC 2500 (MIN)
Units
V
A
V
W
擄C
V
Thermal and Mechanical Characteristics
Parameter
R
胃JC
(IGBT)
R
胃JC
(Diode)
R
胃CS
(Module)
Junction-to-Case IGBT
Junction-to-Case Diode
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
Min
-
-
-
2.7
-
Typical
-
-
0.05
-
170
Maximum
0.38
0.70
-
3.3
-
Units
擄C/W
N*m
g
1
www.irf.com

GB50XF120K 產(chǎn)品屬性

  • Vishay

  • IGBT 模塊

  • IGBT Silicon Modules

  • Hex

  • 1200 V

  • 75 A

  • + 150 C

  • Econo 2

  • Bulk

  • +/- 20 V

  • Screw

  • 6

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