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GB25XF120K Datasheet

  • GB25XF120K

  • IGBT 6PACK MODULE

  • 11頁

  • IRF

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上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

PD - 94569
GB25XF120K
IGBT 6PACK MODULE
Features
鈥?Low VCE (on) Non Punch Through IGBT Technology
鈥?Low Diode VF
鈥?10碌s Short Circuit Capability
鈥?Square RBSOA
鈥?HEXFRED Antiparallel Diode with Ultrasoft Diode
Reverse Recovery Characteristics
鈥?Positive VCE (on) Temperature Coefficient
鈥?Ceramic DBC Substrate
鈥?Low Stray Inductance Design
V
CES
= 1200V
I
C
= 25A, T
C
=80擄C
t
sc
> 10碌s, T
J
=150擄C
ECONO2 6PACK
V
CE(on)
typ. = 2.35V
Benefits
鈥?Benchmark Efficiency for Motor Control
鈥?Rugged Transient Performance
鈥?Low EMI, Requires Less Snubbing
鈥?Direct Mounting to Heatsink
鈥?PCB Solderable Terminals
鈥?Low Junction to Case Thermal Resistance
鈥?UL Listed
聛
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 80擄C
I
CM
I
LM
I
F
@ T
C
= 25擄C
I
F
@ T
C
= 80擄C
I
FM
V
GE
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 80擄C
T
J
T
STG
V
ISOL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Max.
1200
40
25
80
80
40
25
80
鹵20
198
111
150
-40 to +125
AC 2500 (1min)
Units
V
A
V
W
擄C
V
Thermal and Mechanical Characteristics
Parameter
R
胃JC
(IGBT)
R
胃JC
(Diode)
R
胃CS
(Module)
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
Min.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
鈥撯€撯€?/div>
2.7
鈥撯€撯€?/div>
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.05
鈥撯€撯€?/div>
170
Max.
0.63
1.00
鈥撯€撯€?/div>
3.3
鈥撯€撯€?/div>
Units
擄C/W
N m
g
.
www.irf.com
1
10/18/02

GB25XF120K 產(chǎn)品屬性

  • Vishay

  • IGBT 模塊

  • IGBT Silicon Modules

  • Hex

  • 1200 V

  • 40 A

  • + 150 C

  • Econo 2

  • Bulk

  • +/- 20 V

  • Screw

  • 6

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