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GB25RF120K Datasheet

  • GB25RF120K

  • IGBT PIM MODULE

  • 781.79KB

  • 13頁

  • IRF

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上傳產(chǎn)品規(guī)格書

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PD - 94552
GB25RF120K
IGBT PIM MODULE
Features
鈥?Low VCE (on) Non Punch Through IGBT Technology
鈥?Low Diode VF
鈥?10碌s Short Circuit Capability
鈥?Square RBSOA
鈥?HEXFRED Antiparallel Diode with Ultrasoft Diode
Reverse Recovery Characteristics
鈥?Positive VCE (on) Temperature Coefficient
鈥?Ceramic DBC Substrate
鈥?Low Stray Inductance Design
V
CES
= 1200V
I
C
= 25A, T
C
=80擄C
t
sc
> 10碌s, T
J
=150擄C
ECONO2 PIM
V
CE(on)
typ. = 2.40V
Benefits
鈥?Benchmark Efficiency for Motor Control
鈥?Rugged Transient Performance
鈥?Low EMI, Requires Less Snubbing
鈥?Direct Mounting to Heatsink
鈥?PCB Solderable Terminals
鈥?Low Junction to Case Thermal Resistance
鈥?UL Listed
聛
Absolute Maximum Ratings (T
J
=25擄C, unless otherwise indicated)
Parameter
Inverter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Diode Maximum Forward Current
Power Dissipation
Input
Repetitive Peak Reverse Voltage
Surge Current (Non Repetitive)
I t (Non Repetitive)
Brake
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current
Power Dissipation
Repetitive Peak Reverse Voltage
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
2
Symbol
V
CES
V
GES
I
C
I
CM
I
FM
d
P
D
V
RRM
I
F(AV)
I
FSM
It
V
CES
V
GES
I
C
I
CM
P
D
V
RRM
T
J
T
STG
V
ISOL
2
Test Conditions
Ratings
1200
鹵20
Units
V
Continuous
25擄C / 80擄C
25擄C
25擄C
40 / 25
80
80
198
1600
20
250
316
1200
鹵20
As
V
A
W
V
擄C
V
2
A
W
V
A
1 device
50/60Hz sine pulse
sine pulse
25擄C
80擄C
Rectifier Average Output Current
Rated V
RRM
applied, 10ms,
Continuous
1 device
鈥?/div>
鈥?/div>
AC(1min.)
25擄C / 80擄C
25擄C
25擄C
鈥?/div>
鈥?/div>
25 / 15
50
104
1200
150
-40 to +125
2500
Thermal and Mechanical Characteristics
Parameter
Junction-to-Case Inverter IGBT Thermal Resistance
Junction-to-Case Inverter FRED Thermal Resistance
Junction-to-Case Brake IGBT Thermal Resistance
Junction-to-Case Brake Diode Thermal Resistance
Junction-to-Case Input Rectifier Thermal Resistance
Mounting Torque (M5)
R
THJC
Symbol
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.7
Typical
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Maximum
0.63
1.0
1.2
2.3
0.85
3.3
Units
擄C/W
Nm
1
www.irf.com
10/17/02

GB25RF120K 產(chǎn)品屬性

  • Vishay

  • IGBT 模塊

  • IGBT Silicon Modules

  • Array 7

  • 1200 V

  • 40 A

  • + 150 C

  • Econo 2

  • Bulk

  • +/- 20 V

  • Screw

  • 6

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