PD - 50071C
GA600GD25S
SINGLE SWITCH IGBT DUAL INT-A-PAK
Features
鈥?Standard speed, optimized for battery powered
application
鈥?Very low conduction losses
鈥?HEXFRED
TM
antiparallel diodes with ultra-soft
recovery
鈥?Industry standard package
鈥?UL recognition pending
鈥?Internal thermistor
Standard
TM
Speed IGBT
V
CES
=
250
V
V
CE
(on) typ.
= 1.25V
@V
GE
=
15V
,
I
C
=
600A
Benefits
鈥?Increased operating efficiency
鈥?Direct mounting to heatsink
鈥?Performance optimized for power conversion: UPS,
SMPS, Welding
鈥?Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
CM
I
LM
I
FM
V
GE
V
ISOL
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 85擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current聛
Peak Switching Current聜
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
250
600
1200
1200
1200
鹵17
2500
1920
1000
-40 to +150
-40 to +125
Units
V
A
V
W
擄C
Thermal / Mechanical Characteristics
Parameter
R
胃JC
R
胃JC
R
胃CS
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
聝
Mounting Torque, Case-to-Terminal 1, 2
聝
Mounting Torque, Case-to-Terminal 3,4,5,6
Weight of Module
Typ.
鈥?/div>
鈥?/div>
0.04
鈥?/div>
鈥?/div>
鈥?/div>
365
Max.
0.065
0.20
鈥?/div>
6.0
5.0
1.5
鈥?/div>
Units
擄C/W
N
.
m
g
www.irf.com
1
08/27/02
next
GA600GD25S相關(guān)型號PDF文件下載