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GA200TS60UX Datasheet

  • GA200TS60UX

  • Ultra-FastTM Speed IGBT

  • 9頁

  • IRF

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Bulletin I27221 03/06
GA200TS60UX
"HALF-BRIDGE" IGBT INT-A-PAK
Features
鈥?Generation 4 IGBT technology
鈥?UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
鈥?Very low conduction and switching losses
鈥?HEXFRED
TM
antiparallel diodes with ultra-soft
recovery
鈥?Industry standard package
鈥?UL approved
Ultra-Fast
TM
Speed IGBT
V
CES
= 600V
V
CE(on)
typ. = 1.74V
@ V
GE
= 15V, I
C
= 200A
Benefits
鈥?/div>
Increased operating efficiency
鈥?Direct mounting to heatsink
鈥?Performance optimized for power conversion:
UPS, SMPS, Welding
鈥?Low EMI, requires less snubbing
INT-A-PAK
Absolute Maximum Ratings
Parameters
V
CES
I
C
I
CM
I
LM
I
FM
V
GE
V
ISOL
P
D
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
Peak Switching Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
@ T
C
= 25擄C
@ T
C
= 85擄C
@ T
C
= 25擄C
Max
600
265
400
400
400
鹵 20
2500
625
325
Units
V
A
V
W
www.irf.com
1

GA200TS60UX 產(chǎn)品屬性

  • Vishay

  • IGBT 模塊

  • IGBT Silicon Modules

  • Dual

  • 600 V

  • 265 A

  • + 150 C

  • INT-A-PAK

  • Bulk

  • +/- 20 V

  • - 40 C

  • Screw

  • 15

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