PD- 50070A
/) 5)$5
INSULATED GATE BIPOLAR TRANSISTOR
Features
鈥?Standard : Optimized for minimum saturation
voltage and low operating frequencies up to 1kHz
鈥?Lowest conduction losses available
鈥?Fully isolated package ( 2,500 volt AC)
鈥?Very low internal inductance ( 5 nH typ.)
鈥?Industry standard outline
C
Standard Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.10V
@V
GE
= 15V, I
C
= 100A
n-channel
Benefits
鈥?Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
鈥?Easy to assemble and parallel
鈥?Direct mounting to heatsink
鈥?Plug-in compatible with other SOT-227 packages
S O T -2 2 7
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
E
ARV
V
ISOL
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
Max.
600
200
100
400
400
鹵 20
155
2500
630
250
-55 to + 150
-55 to + 150
12 lbf 鈥n(1.3N鈥)
Units
V
A
V
mJ
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
鈥撯€撯€?/div>
0.05
30
Max.
0.20
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Units
擄C/W
gm
www.irf.com
1
4/24/2000
next