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Generation 5 IGBT NPT technology
UltraFast optimized high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode.
Very low conduction and switching losses
HEXFRED
TM
antiparallel diodes with ultra-soft
recovery
Industry standard package
UL recongnition pending
Short circuit rated 10
碌
s
Increased operating efficiency
Direct mounting to heatsink
Performance optimized for power conversion: UPS,
SMPS, Welding,Mortor Control
Lower EMI, requries less snubbing
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ Tc=25
o
C
I
C
@ Tc=85
o
C
I
CM
I
LM
I
FM
V
GE
V
ISOL
P
D
@ T
C
=25
o
C
P
D
@ T
C
=85
o
C
T
J
T
STG
Collector- to- Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed collector Current
Peak switching Current
Peak Diode Forward Current
Gate- to- Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t =1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
210
150
300
300
300
鹵20
2500
1250
650
-40 to +150
-40 to +125
Units
V
A
V
W
o
C
Termal / Mechanical Characteristics
Parameter
R
胃JC
R
胃JC
R
胃CS
Termal Resistance, Junction-to- Case- IBGT
Termal Resistance, Junction-to- Case- Diode
Termal Resistance, Csar-to- Sink- Module
Mouting Torque, Case-to-Heatsink
Mouting Torque, Case-to-Terminal 1,2 & 3
Weight of Module
Typ.
-
-
0.1
-
-
400
Max.
0.10
0.15
-
4.0
3.0
-
Units
o
C/W
N.m
g
1
1
2
