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GA100TS120U Datasheet

  • GA100TS120U

  • HALF-BRIDGE IGBT INT-A-PAK

  • 10頁

  • IRF

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PD - 50060B
GA100TS120U
"HALF-BRIDGE" IGBT INT-A-PAK
Features
鈥?Generation 4 IGBT technology
鈥?UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
鈥?Very low conduction and switching losses
鈥?HEXFRED
鈩?/div>
antiparallel diodes with ultra- soft
recovery
鈥?Industry standard package
鈥?UL approved
Ultra-Fast
TM
Speed IGBT
V
CES
=
1200
V
V
CE
(on) typ.
= 2.4V
@V
GE
=
15V
,
I
C
=
100A
Benefits
鈥?Increased operating efficiency
鈥?Direct mounting to heatsink
鈥?Performance optimized for power conversion: UPS,
SMPS, Welding
鈥?Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
CM
I
LM
I
FM
V
GE
V
ISOL
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 85擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
鉃€
Peak Switching Current
鉃?/div>
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
1200
100
200
200
200
鹵20
2500
520
270
-40 to +150
-40 to +125
Units
V
A
V
W
擄C
Thermal / Mechanical Characteristics
Parameter
R
胃JC
R
胃JC
R
胃CS
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3
鉃?/div>
Weight of Module
Typ.
鈥?/div>
鈥?/div>
0.1
鈥?/div>
鈥?/div>
200
Max.
0.24
0.35
鈥?/div>
4.0
3.0
鈥?/div>
Units
擄C/W
N
.
m
g
www.irf.com
1
4/24/2000

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