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GA100NA60U Datasheet

  • GA100NA60U

  • INSULATED GATE BIPOLAR TRANSISTOR

  • 301.28KB

  • 10頁

  • IRF

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PD - 94290
GA100NA60U
INSULATED GATE BIPOLAR TRANSISTOR
Features
Optimized for minimum saturation
voltage and operating frequencies up to 40 kHz in
hard switching, > 200 kHz in resonant mode
鈥?Very low conduction and switching losses
鈥?Fully isolated package (2,500 Volt AC/RMS)
鈥?Very low internal inductance (
鈮?/div>
5 nH typ.)
鈥?Industry standard outline
鈥?/div>
UltraFast
TM
:
2
1
Ultra-Fast
TM
Speed IGBT
3
V
CES
= 600V
V
CE(on) typ.
= 1.49V
@V
GE
= 15V, I
C
= 50A
4
Benefits
鈥?Designed for increased operating efficiency in power
conversion: PFC, UPS, SMPS, Welding, Induction heating
鈥?Lower overall losses available at frequencies
鈮?/div>
20kHz
鈥?Easy to assemble and parallel
鈥?Direct mounting to heatsink
鈥?Lower EMI, requires less snubbing
鈥?Plug-in compatible with other SOT-227 packages
SOT-227
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
V
GE
V
ISOL
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current聜
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
Max.
600
100
50
200
200
鹵 20
2500
250
100
-55 to + 150
-55 to + 150
12 lbf 鈥n(1.3N鈥)
Units
V
A
V
W
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃JC
R
胃CS
Wt
Junction-to-Case, IGBT
Thermal Resistance, Junction-to-Case , Diode
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
鈥撯€撯€?/div>
鈥撯€撯€?/div>
0.05
30
Max.
0.50
1.0
鈥撯€撯€?/div>
鈥撯€撯€?/div>
Units
擄C/W
gm
www.irf.com
1
7/27/01

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