PHOTODIODE
InGaAs PIN photodiode
G9906-01
Small package InGaAs PIN photodiode for C-L band
G9906-01 is an InGaAs PIN photodiode designed to minimize temperature dependence of the photo sensitivity in the C-L band. It has an active
area of
蠁0.3
mm and is housed in a subminiature package making it ideal for use in smaller modules.
Features
Applications
l
C-L band temperature dependence:
鹵0.2 dB (-10 藲C to +85 藲C)
l
Small package
l
Low dark current: 0.5 nA Max. (V
R
=5 V)
l
C-L band monitors
s
Absolute maximum ratings (Ta=25
擄C)
Parameter
Reverse voltage
Forward current
Operating temperature
Storage temperature
Symbol
V
R
Max.
I
F
Topr
Tstg
Condition
Value
20
10
-10 to +85
-55 to +125
Unit
V
mA
擄C
擄C
No condensation
No condensation
s
Electrical and optical characteristics (Ta=25
擄C)
Parameter
Active area
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Photo response uniformity
Dark current
Cut-off frequency
Terminal capacitance
Shunt resistance
Detectivity
Noise equivalent power
Linearity
Symbol
-
位
位p
S
-
I
D
fc
Ct
Rsh
D*
NEP
-
位=1.3
碌m
位=位p
位=1.53
to 1.62 碌m,
T= -10 to 85
擄C
V
R
=5 V
V
R
=5 V, R
L
=50
鈩?/div>
-3dB
V
R
=5 V, f=1 MHz
V
R
=10 mV
位=位p
位=位p
V
R
=5 V, R
L
=2
鈩?/div>
-55 to +10 dBm
Condition
10 % or more of
peak sensitivity
Min.
-
-
-
0.8
0.85
-0.2
-
-
-
-
-
-
-0.15
Typ.
蠁0.3
0.9 to 1.7
1.55
0.9
0.95
-
0.2
500
6
1000
5
脳
10
12
4
脳
10
-15
-
Max.
-
-
-
-
-
+0.2
0.5
-
8
-
-
-
+0.15
Unit
mm
碌m
碌m
A/W
dB
nA
MHz
pF
M鈩?/div>
cm 路 Hz
1/2
/W
W/Hz
1/2
dB
1
1
2
