PHOTODIODE
GaAs PIN photodiode array
G8921-01
Photodiode array for data communication
Features
Element pitch: 250 碌m
4-element array
l
High-speed response: 10 Gbps [(2.5 Gbps per channel) 脳4]
at low bias voltage (V
R
=2 V)
l
Low dark current, low capacitance
l
Up to 16 elements available as option
Applications
l
Active area:
蠁0.06
mm
l
Optical fiber communications
l
High-speed data link
I
General ratings
Parameter
Active area
Element pitch
Number of elements
Symbol
-
-
-
Symbol
V
R
Max
.
I
R
Max.
Topr
Tstg
Remark
Value
f0.06
250
4
Value
30
0.5
-40 to +85
-55 to +125
Unit
mm
碌m
ch
Unit
V
mA
擄C
擄C
I
Absolute maximum ratings
Parameter
Reverse voltage
Reverse current
Operating temperature
Storage temperature
* In N
2
environment or in vacuum
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Dark current
Terminal capacitance
Cut-off frequency
*
I
Electrical and optical characteristics (Unless other wise, Ta=25 擄C, per 1 element)
Symbol
l
lp
S
I
D
Ct
fc
Condition
Min.
-
-
0.45
-
-
2
l=850
nm
V
R
=5 V
V
R
=2 V, f=1 MHz
l=850
nm, V
R
=2 V,
R
L
=50
W,
-3 dB
Typ.
470 to 870
850
0.5
2
0.35
-
Max.
-
-
-
50
0.5
-
Unit
nm
nm
A/W
pA
pF
GHz
1
1
2
