PHOTODIODE
InGaAs PIN photodiode
G8370-10
Ceramic package with large active area (蠁10 mm)
Features
Applications
l
Large active area:
蠁10
mm
l
High sensitivity: 0.95 A/W Typ. (位=1.55 碌m)
l
Low dark current
l
Low PDL: 5 mdB Typ., 10 mdB Max.
l
Photo response non-uniformity: 鹵2 % Typ.
l
LD power monitor
l
LD aging equipment
I
General / Absolute maximum ratings
Parameter
Active area
Reverse voltage
Operating temperature
Storage temperature
* No condensation
Symbol
-
V
R
Max.
Topr.
Tstg.
Value
f10
1
-25 to +70 *
-25 to +70 *
Unit
mm
V
擄C
擄C
I
Electrical and optical characteristics (Ta=25 擄C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Dark current
Shunt resistance
Terminal capacitance
Cut-off frequency
Noise equivalent power
Detectivity
Photo response non-uniformity
PDL
Symbol
l
lp
S
I
D
Rsh
Ct
fc
NEP
D*
PRNU
-
Condition
l=1.3
碌m
l=lp
V
R
=10 mV
V
R
=10 mV
V
R
=0 V, f=1 MHz
V
R
=0 V, R
L
=50
W
l=lp
l=lp
80 % of active area
V
R
=0 V,
l=1.55
碌m
Min.
-
-
0.8
0.85
-
5
-
-
-
-
-
-
Typ.
0.9 to 1.7
1.55
0.85
0.95
0.2
50
20
100
6 脳 10
-13
1.5 脳 10
12
鹵2
5
Max.
-
-
-
-
2
-
-
-
-
-
-
10
Unit
碌m
碌m
A/W
A/W
碌A(chǔ)
kW
nF
kHz
W/Hz
1/2
cm路Hz
1/2
/W
%
mdB
PRELIMINARY DATA
Jan. 2003
1
1
2
