CORPORATION
G8050S
Description
Features
N P N E P I TA X I A L T R A N S I S T O R
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
ISSUED DATE :2004/04/22
REVISED DATE :2004/11/29B
The G8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio
amplifier for portable radio and general purpose applications.
*Collector current up to 700mA
*Collector 鈥揈mitter voltage up to 20V
*Complementary to G8550S
Package Dimensions
D
E
S1
TO-92
A
b1
S E A T IN G
PLANE
REF.
L
e1
e
b
C
A
S
1
b
b
1
C
Millimeter
Min.
Max.
4.45
4.7
1.02
-
0.36
0.51
0.36
0.76
0.36
0.51
REF.
D
E
L
e1
e
Millimeter
Min.
Max.
4.44
4.7
3.30
3.81
12.70
-
1.150 1.390
2.42
2.66
Absolute Maximum Ratings
(Ta = 25 :
Parameter
,unless otherwise specified)
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
V
CBO
V
CEO
V
EBO
I
C
Tj
Ts
TG
P
D
Typ.
-
-
-
-
-
100
-
-
-
10
,unless otherwise specified)
Max.
Unit
-
V
-
V
-
V
1
uA
100
nA
400
-
0.5
V
1
V
-
MHz
-
pF
25
20
5
0.7
+150
-55 ~ +150
625
Test Conditions
I
C
=10uA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=10uA,I
C
=0
V
CB
=20V, I
E
=0
V
BE
=6V,Ic=0
V
CE
=1V,I
C
=150mA
V
CE
=1V,I
C
=150mA
l
C
=500mA,I
B
=50mA
VCE=1V,Ic=150mA
V
CE
=10V,Ic=20mA, ,f=100MHz
V
CB
=10V, I
E
=0A,f=1MHz
V
V
V
A
mW
Electrical Characteristics
(Ta = 25 :
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
1
h
FE
2
V
CE(sat)
V
BE(on)
fT
Cob
Min.
25
20
5
-
-
100
-
-
-
150
-
Classification Of h
FE
1
Rank
Range
C
100-180
D
160-300
E
250-400
G8050S
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