Pb Free Plating Product
CORPORATION
G6402
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2005/01/17
REVISED DATE :2005/03/22B
BV
DSS
R
DS(ON)
I
D
65m
-4.2A
-
20V
The G6402 provides the designer with the best combination of fast switching, low on-resistance and
cost-effectiveness.
The G6402 is universally preferred for all commercial-industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
Description
Features
&
Low R
DS(ON)
Ultra
Applications
&
Power Management in Notebook Computer
&Portable Equipment
&Battery Powered System.
&Fast Switching
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
@T
A
=25 :
I
D
@T
A
=70 :
I
DM
P
D
@T
A
=25 :
Tj, Tstg
Symbol
Rthj-a
Ratings
-20
f 12
-4.2
-3.4
-10
1.38
0.01
-55 ~ +150
Ratings
90
Unit
V
V
A
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Max.
Unit
/W
1/4
1
2
3
4
