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G495SD

Description

Package Dimensions

1/2

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O LT A G E 4 0 V, C U R R E N T 0 . 4 A

The G495SD is designed for low power rectification.

REF.

A

B

C

D

E

F

Millimeter

Min.

Max.

2.70

3.10

2.40

2.80

1.40

1.60

0.35

0.50

0

0.10

0.45

0.55

REF.

G

H

K

J

L

M

Millimeter

Min.

Max.

1.90 REF.

1.00

1.30

0.10

0.20

0.40

-

0.85

1.15

0C

10 C

Absolute Maximum Ratings at Ta = 25 :

Parameter

Junction Temperature

Storage Temperature

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Peak Forward Surge Current at 8.3mSec single half sine-wave

Typical Junction Capacitance between Terminal

Maximum Average Forward Rectified Current

Total Power Dissipation

Symbol

Tj

Tstg

V

RRM

V

RMS

V

DC

I

FSM

C

J

Io

PD

Ratings

+125

-40 ~ +125

40

28

25

2.0

20

0.4

225

V

V

V

A

pF

A

mW

Unit

Characteristics

at Ta = 25 :

Symbol

V

F

(1)

V

F

(2)

IR

Typ.

0.3

0.5

70

Unit

V

V

uA

Test Condition

IF(1) = 10mA

IF(2) = 200mA

VR = 25V

Characteristics

Maximum Instantaneous Forward Voltage

Maximum Instantaneous Forward Voltage

Maximum Average Reverse Current

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