ULTRAFAST GaAs
MSM PHOTODETECTORS
G4176 SERIES
Ultrafast Response (tr, tf = 30ps
G4176
), Low Dark Current
鈻燜EATURES
鈼廢ltrafast
response
鈼廘ow
dark current
鈼廘arge
photosensitive area
鈻燗PPLICATIONS
鈼廜ptical
high speed waveform measurement
鈼廜ptical
communications
G4176
G4176-01
G4176-02
The G4176 is a GaAs MSM (Metal-Semiconductor-Metal)
photodetector that achieves ultrafast response times of 30 ps
(rise and fall) and a low dark current of 100 pA (at 25 擄C).
The photosensitive area of the MSM photodetector is
composed of symmetrical and interdigital Schottky contacts,
and is relatively larger than other ultra fast photodetectors, thus
facilitating coupling with an optical system. So, the MSM
photodetector is ideal as an ultrafast detector for digital signal
transmission in optical communications.
Additionally, both polarities of the bias voltage are available,
and each polarity of the output pulse can be obtained in
response to the applied bias.
The G4176 series consists of various package styles: a coaxial
metal package* facilitating connecting with an SMA connector
(G4176: The bias-tee is necessary), a general purpose TO-18
package (G4176-01), and a small ceramic package (G4176-
02). Fiber-pigtailed or optical connectorised types are also
available for G4176 and G4176-01.
*Japanese Patent No.2070802
鈻燗BSOLUTE
MAXIMUM RATINGS錛圱a=25鈩冿級
Parameter
Symbol
Condition
Value
10
Pulse width鈮?ns
L
max
Pulse width錛?ns
50
5
Topr
Tstg
-40 to +85
-40 to +100
mW
mW
鈩?/div>
鈩?/div>
Unit
V
Maximum Bias Voltage V
Bmax
Maximum Light Input
Pulsed Light鈥?/div>
CW to Pulsed Light
Operating Temperature
Storage Temperature
鈻燛LECTRICAL
AND OPTICAL CHARACTERISTICS錛圱a=25鈩? V
B
=7V錛?/div>
Parameter
Radiant sensitivity
Dark Current
NEP**
G4176
G4176-01
G4176-02
位=850nm
-
-
-
3脳10
-15
4脳10
4脳10
-15
-15
Symbol
S
I
D
Condition
Min.
位=850nm
0.2
-
Value
Typ.
0.3
100
Max.
-
300
Unit
A/W
pA
-
-
-
W/Hz
1/2
鈻燝eneral
Characteristics (Ta=25鈩?
Parameter
Spectral Response Range
Symbol
位
Condition
V
B
=7V
V
B
=7V
Value
450 to 870
850
0.2脳0.2
1脳1
TO-5
Unit
nm
nm
mm
2
mm
2
Terminal Capacitance
G4176
G4176-01
G4176-02
Rise Time
G4176
G4176-01
G4176-02
Fall Time
G4176
G4176-01
G4176-02
**Noise Equivalent Power
Ct
-
-
-
0.3
0.5
0.8
0.4
0.6
1.0
pF
Peak Response Wavelength
位p
Effective Sensitive Area
Chip Size
Package
鈥僄4176
鈥僄4176-01
鈥僄4176-02
A
tr
10 to 90%
-
-
-
30
50
40
40
80
60
ps
(Unified with SMA connector)
TO-18
Ceramic
-
tf
10 to 90%
-
-
30
50
40
40
80
60
ps
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 漏1999 Hamamatsu Photonics K.K.
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