PHOTODIODE
GaAsP photodiode
Diffusion type
Photodiode for visible light detection
Features
Applications
l
Low dark current
l
High stability
l
Analytical instrument
l
Color identification
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
鉃€/K
鉃?K
鉃?K
鉃?R
鉃?R
鉃?L
鉃?R
Package
Active area
size
(mm)
1.3 脳 1.3
2.7 脳 2.7
5.6 脳 5.6
1.3 脳 1.3
5.6 脳 5.6
1.3 脳 1.3
1.3 脳 1.3
Effective
active
area
(mm
2
)
1.66
7.26
29.3
1.66
29.3
1.66
1.66
Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
V
R
Max.
(V)
(擄C)
(擄C)
G1115
G1116
G1117
G1118
G1120
G3067
G2711-01
TO-18
TO-5
TO-8
Ceramic
Ceramic
TO-18
Plastic
5
-30 to +80
-40 to +85
s
Electrical and optical characteristics (Typ. Ta=25
擄C
, unless otherwise noted)
Spectral
Peak
response
sensitivity
range
wavelength
位
位p
(nm)
G1115
G1116
G1117
G1118
G1120
G3067
G2711-01
(nm)
Photo sensitivity
S
(A/W)
位p
GaP
LED
560 nm
Terminal
Temp.
Dark
Short circuit
Rise time
capacitance
coefficient
current
current
tr
of
Ct
Isc
I
D
V
R
=0 V
I
D
V
R
=0 V
Max.
x
R
L
=1 k鈩?/div>
He-Ne
100
l
T
CID
f=10 kHz
laser
Min. Typ.
V
4
=10 mV
V
4
=1 V
633 nm
(碌A(chǔ)) (碌A(chǔ)) (pA) (pA)
(times/擄C)
(碌s)
(pF)
1
300
0.12 0.15 1
10
4
1400
0.45 0.6 2.5
25
15
6000
2
2.5
5
50
1
300
10
0.29 0.12 0.15 1
1.07
15
6000
2
2.5
5
50
1
300
0.75 0.95 1
10
1
300
0.15 0.18 1
10
Shunt
resistance
Rsh
V
R
=10 mV
NEP
Type No.
300 to 680
640
0.3
0.29
Min. Typ.
(G鈩? (G鈩? (W/Hz
1/2
)
10
80 1.5 脳 10
-15
4
30 2.5 脳 10
-15
2
15 3.5 脳 10
-15
10
80 1.5 脳 10
-15
2
15 3.5 脳 10
-15
10
80 1.5 脳 10
-15
10
80 1.5 脳 10
-15
* Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating
1
2
3
4
