SOT223 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 聳 JANUARY 1996
PARTMARKING DETAIL:-
COMPLEMENTARY TYPE :-
DEVICE TYPE IN FULL
FZTA64
FZTA14
C
E
C
B
SOT223
SYMBOL
V
CES
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
30
30
30
10
1
2
-55 to +150
UNIT
V
V
V
V
A
W
擄C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CES
I
CBO
MIN.
30
100
100
1.5
1.6
2.0
2.0
2.2
10K
20K
5K
170
MHz
TYP.
MAX.
UNIT
V
nA
nA
V
V
V
V
V
CONDITIONS.
I
C
=100
碌
A, V
BE
=0
V
CB
=30V, I
E
=0
V
EB
=10V, I
C
=0
I
C
=100mA, I
B
=0.1mA*
I
C
=1A, I
B
=1mA*
I
C
=100mA, V
CE
=5V*
I
C
=100mA, I
B
=0.1mA
I
C
=1A, I
B
=1mA
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=50mA, V
CE
=5V*
f=20MHz
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
V
BE(on)
V
BE(sat)
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
f
T
*Measured under pulsed conditions. Pulse Width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT38C datasheet.
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