SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) POWER TRANSISTOR
ISSUE 3 聳 OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance;
R
CE(sat)
44m鈩?at 5A
* 6 Amps continuous current (Up to 20 Amps peak )
* High gain and very low saturation voltage
PARTMARKING DETAIL 聳 FZT968
FZT968
C
E
C
B
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
MIN.
-15
-12
-6
TYP.
-28
-20
-8
-10
-1.0
-10
-65
-132
-360
-1050
-870
300
300
200
150
450
450
300
240
50
80
161
120
116
-130
-170
-450
-1200
-1050
1000
MAX.
VALUE
-15
-12
-6
-20
-6
3
-55 to +150
UNIT
V
V
V
碌
A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
UNIT
V
V
V
A
A
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated)
CONDITIONS.
I
C
=-100
碌
A
I
C
=-10mA*
I
E
=-100
碌
A
V
CB
=-12V
V
CB
=-12V, T
amb
=100擄C
V
EB
=-6V
I
C
=-500mA, I
B
=-5mA*
I
C
=-2A, I
B
=-50mA*
I
C
=-6A, I
B
=-250mA*
I
C
=-6A, I
B
=-250mA*
I
C
=-6A, V
CE
=-1V*
I
C
=-10mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
I
C
=-20A, V
CE
=-1V*
MHz
pF
ns
ns
I
C
=-100mA, V
CE
=-10V
f=50MHz
V
CB
=-20V, f=1MHz
I
C
=-4A, I
B1
=-400mA
I
B2
=400mA, V
CC
=-10V
nA
nA
mV
mV
mV
mV
mV
Transition Frequency
Output Capacitance
Switching Times
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
3 - 294
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