SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 2 - NOVEMBER 1995
FEATURES
* Extremely low equivalent on-resistance;
R
CE(sat)
* 6 Amps continuous current
* Up to 20 Amps peak current
* Very low saturation voltage
* Excellent h
FE
characteristics specified upto 20 Amps
FZT948
FZT949
C
E
C
PARTMARKING DETAILS 鈥?DEVICE TYPE IN FULL
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:Tstg
-6
3
-55 to +150
FZT948
-40
-20
-6
-20
-5.5
FZT949
-50
-30
UNIT
V
V
V
A
A
W
擄C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
TBA