FZT855 Datasheet

IC型號：
FZT855
PDF描述：
NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR
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169.83KB
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3頁
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ZETEX

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SOT223 NPN SILICON PLANAR HIGH CURRENT

(HIGH PERFORMANCE)TRANSISTOR

ISSUE 4 - NOVEMBER 2001

鉁?/div>

FEATURES

* Up to 5 Amps continuous collector current, up to 10 Amp peak

FZT855

Very low saturation voltage

Excellent h

specified up to 10 Amps

PARTMARKING DETAIL -

COMPLEMENTARY TYPE -

FZT855

FZT955

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25擄C

Operating and Storage Temperature Range

SYMBOL

CBO

CEO

EBO

tot

stg

VALUE

250

150

-55 to +150

UNIT

擄C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 4 inch square minimum

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