SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 聳 FEBRUARY 1995
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE 聳
FZT658
PARTMARKING DETAIL 聳
FZT758
C
FZT758
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
MIN.
MAX.
VALUE
-400
-400
-5
-1
-500
2
-55 to +150
UNIT
CONDITIONS.
UNIT
V
V
V
A
mA
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
Base-Emitter Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Switching times
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
t
on
t
off
140
2000
50
50
40
50
20
Typical
Typical
MHz
pF
ns
ns
-400
-400
-5
-100
-100
-100
-0.30
-0.25
-0.50
-0.9
-1.0
V
V
V
nA
nA
nA
V
V
V
V
V
I
C
=-100
碌
A
I
C
=-10mA*
I
E
=-100
碌
A
V
CB
=-320V
V
CE
=-320V
V
EB
=-4V
I
C
=-20mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V*
I
C
=-200mA, V
CE
=-10V*
I
C
=-20mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
I
C
=-100mA, V
CC
=-100V
I
B1
=10mA, I
B2
=-20mA
* Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
3 - 242
1
2
