SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 聳 FEBRUARY 1996
7
FEATURES
* 25 Volt V
CEO
* Low saturation voltage
* Excellent h
FE
specified up to 6A (pulsed).
COMPLEMENTARY TYPE 聳
PARTMARKING DETAIL 聳
FZT655
FZT755
FZT755
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
50
50
20
30
20
-150
-150
-5
-0.1
-0.1
-0.5
-0.5
-1.1
-1.0
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
VALUE
-150
-150
-5
-2
-1
2
-55 to +150
UNIT
V
V
V
碌
A
碌
A
UNIT
V
V
V
A
A
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
CONDITIONS.
I
C
=-100
碌
A
I
C
=-10mA*
I
E
=-100
碌
A
V
CB
=-125V
V
EB
=-3V
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-200mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-500mA, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
MHz
pF
I
C
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-10V f=1MHz
V
V
V
V
300
*Measured under pulsed conditions. Pulse Width=300
碌
s. Duty cycle
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