SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4聳 FEBRUARY 1996
FEATURES
* Low saturation voltage
* Excellent h
FE
specified up to 2A
FZT753
C
E
COMPLEMENTARY TYPE 聳
PARTMARKING DETAIL 聳
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
SYMBOL MIN.
-120
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
70
100
55
25
100
-0.17
-0.30
-0.9
-0.8
200
200
170
55
140
-100
-5
-0.1
-10
-0.1
-0.3
-0.5
-1.25
-1.0
300
MHz
FZT653
FZT753
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
VALUE
-120
-100
-5
-6
-2
2
-55 to +150
UNIT
V
V
V
碌
A
碌
A
碌
A
C
B
ABSOLUTE MAXIMUM RATINGS.
UNIT
V
V
V
A
A
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
CONDITIONS.
I
C
=-100
碌
A
I
C
=-10mA*
I
E
=-100
碌
A
V
CB
=-100V
V
CB
=-100V,
T
amb
=100擄C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-100mA, V
CE
=-5V
f=100MHz
V
CB
=-10V f=1MHz
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
V
V
V
V
f
T
30
pF
C
obo
t
on
40
ns
t
off
600
ns
*Measured under pulsed conditions. Pulse Width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
3 - 236
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