SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 - OCTOBER 1995
FEATURES
*
*
Guaranteed h
FE
Specified up to 2A
Fast Switching
DEVICE TYPE IN FULL
FZT604 - FZT704
FZT605 - FZT705
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
FZT604
120
100
10
4
1.5
2
C
FZT604
FZT605
PARTMARKING DETAIL -
COMPLEMENTARY TYPES -
E
C
B
FZT605
140
120
UNIT
V
V
V
A
A
W
擄C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
PARAMETER
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
SYMBOL MIN. MAX. UNIT CONDITIONS.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
120
140
100
120
10
0.01
10
0.01
10
I
EBO
FZT604
FZT605
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
I
CES
0.1
10
10
1.0,
1.5
1.8
1.7
2K
5K
100K
2K
0.5K
V
V
V
V
碌
A
碌
A
碌
A
碌
A
碌
A
碌
A
碌
A
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector Cut-Off
Current
FZT604
FZT605
FZT604
FZT605
FZT604
FZT605
I
C
=100
碌
A
I
C
=100
碌
A
I
C
=10mA*
I
C
=10mA*
I
E
=100
碌
A
V
CB
=100V
V
CB
=100V,
T
amb
=100擄C
V
CB
=120V
V
CB
=120V,
T
amb
=100擄C
V
EB
=8V
V
CES
=100V
V
CES
=120V
I
C
=250mA, I
B
=0.25mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, V
CE
=5V*
I
C
=50mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Emitter-Base Breakdown Voltage
Emitter Cut-Off Current
Collector-Emitter
Cut-Off Current
Collector-EmitterSaturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward
Current Transfer Ratio
V
V
V
V
3 - 202
1
2
3
