NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low equivalent on-resistance;
R
CE(sat)
125m鈩?at 2A
* Gain of 400 at I
C
=1 Amp
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Siren Drivers, DC-DC converters
PARTMARKING DETAIL 聳
FZT690B
FZT690B
C
E
C
B
VALUE
45
45
5
6
3
2
-55 to +150
UNIT
V
V
V
A
A
W
擄C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C)
Collector-Base Breakdown
Voltage
Collector-EmitterBreakdown
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Base-Emitter Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
V
(BR)CBO
45
V
(BR)CEO
45
V
(BR)EBO
5
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
500
400
150
50
150
200
16
33
1300
SYMBOL MIN. TYP. MAX UNIT CONDITIONS.
.
V
V
V
0.1
0.1
0.1
0.5
0.9
0.9
碌
A
碌
A
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=35V
V
EB
=4V
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, V
CE
=2V*
I
C
=100mA,V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
V
V
V
V
f
T
C
ibo
C
obo
t
on
t
off
MHz I
C
=50mA,V
CE
=5V,f=50MHz
pF
pF
ns
ns
V
EB
=0.5V, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA, I
B!
=50mA
I
B2
=50mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
3 - 221
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