SOT223 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3聳 FEBRUARY 1995
FEATURES
* Low saturation voltage
7
FZT655
C
COMPLEMENTARY TYPE 聳 FZT755
E
PARTMARKING DETAIL 聳 FZT655
B
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
3 - 211
50
50
20
30
20
150
150
5
0.1
0.1
0.5
0.5
1.1
1.0
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
VALUE
150
150
5
2
1
2
-55 to +150
UNIT
V
V
V
碌
A
碌
A
UNIT
V
V
V
A
A
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
CONDITIONS.
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=125V
V
EB
=3V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=200mA*
I
C
=500mA, I
B
=50mA*
I
C
=500mA, V
CE
=5V*
I
C
=10mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
MHz
pF
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=10V, f=1MHz
V
V
V
V
300
*Measured under pulsed conditions. Pulse Width=300
碌
s. Duty cycle
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