SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 聳 NOVEMBER 1995
FEATURES
* 2A continuous current
* Useful h
FE
up to 6A
* Fast Switching
PARTMARKING DETAIL 聳 DEVICE TYPE IN FULL
C
FZT603
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
100
80
10
6
2
2
-55 to +150
UNIT
V
V
V
A
A
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
0.79
0.80
0.88
0.99
0.86
MIN.
100
80
10
TYP.
240
110
16
0.01
10
0.1
10
0.88
0.90
1.00
1.13
MAX.
UNIT
V
V
V
碌
A
碌
A
碌
A
碌
A
CONDITIONS.
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=80V
V
CB
=80V,
T
amb
=100擄C
V
EB
=8V
V
CES
=80V
I
C
=0.25A, I
B
=0.25mA*
I
C
=0.4A, I
B
=0.4mA*
I
C
=1A, I
B
=1mA*
I
C
=2A, I
B
=20mA*
I
C
=2A, I
B
=20mA 聠
V
V
V
V
V
聠 T
j
=150擄C
1
2
3
