SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 - DECEMBER 2001
FEATURES
Low equivalent on resistance
R
CE(sat)
= 350m
PART MARKING DETAIL -
COMPLEMENTARY TYPE -
FZT591A
FZT491A
at 1A
FZT591A
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-40
-40
-5
-2
-1
-200
2
-55 to +150
UNIT
V
V
V
A
A
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Static Forward Current Transfer Ratio
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
-40
-40
-5
-100
-100
-100
-0.2
-0.35
-0.5
-1.1
-1.0
300
300
250
160
30
150
10
800
MAX. UNI CONDITIONS.
T
V
V
V
nA
nA
nA
V
V
V
V
V
I
C
=-100碌A(chǔ)
I
C
=-10mA*
I
E
=-100碌A(chǔ)
V
CB
=-30V
V
EB
=-4V
V
CES
=-30V
I
C
=-100mA,I
B
=-1mA*
I
C
=-500mA,I
B
=-20mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, I
B
=-50mA*
I =-1A, V
CE
=-5V*
C
V
BE(sat)
V
BE(on)
h
FE
I
C
=-1mA,
I
C
=-100mA*,
I
C
=-500mA*, V
CE
=-5V
I
C
=-1A*,
I
C
=-2A*,
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
pF
V
CB
=-10V, f=1MHz
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300碌s. Duty cycle
錚?/div>
2%
Spice parameter data is available upon request for this device
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1
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