SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH VOLTAGE TRANSISTOR
ISSUE 2 聳 DECEMBER 1995
FEATURES
* 400 Volt V
CEO
* 200mA continuous current
* P
tot
= 2 Watt
C
FZT558
E
PARTMARKING DETAIL -
FZT558
B
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Collector-Base
Breakdown Voltage
Switching times
SYMBOL MIN.
V
(BR)CBO
V
BR(CEO)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
t
on
t
off
95
1600
100
100
15
50
5
-400
-400
-5
-100
-100
-100
-0.2
-0.5
-0.9
-0.9
300
MHz
pF
ns
ns
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
VALUE
-400
-400
-5
-200
2
-55 to +150
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=-100
碌
A
I
C
=-10mA*
I
E
=-100
碌
A
V
CB
=-320V
V
CE
=-320V
V
EB
=-4V
I
C
=-20mA, I
B
=-2mA*
I
C
=-50mA, I
B
=-6mA*
I
C
=-50mA, I
B
=-5mA*
I
C
=-50mA, V
CE
=-10V*
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-20V
f=20MHz
V
CB
=-20V, f=1MHz
I
C
=-50mA, V
C
=-100V
I
B1
=5mA, I
B2
=-10mA
UNIT
V
V
V
mA
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
* Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
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