SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 聳 MARCH 1995
PARTMARKING DETAIL 聳
7
FZT549
C
FZT549
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
MIN.
-35
-30
-5
-0.1
-10
-0.1
-0.50
-0.75
-1.25
-1.0
70
100
80
30
100
10
300
MHz
pF
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
VALUE
-35
-30
-5
-2
-1
2
-55 to +150
UNIT
V
V
V
碌
A
碌
A
碌
A
UNIT
V
V
V
A
A
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
CONDITIONS.
I
C
=-100
碌
A
I
C
=-10mA*
I
E
=-100
碌
A
V
CB
=-30V
V
CB
=-30V, T
amb
=100擄C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
-200mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-2V
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-100mA, V
CE
=-5V,
f =100MHz
V
CB
=-10V, f=1MHz
V
V
V
V
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
For typical characteristics graphs see FMMT549 datasheet.
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