SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
C
FZT491
COMPLEMENTARY TYPE 聳
PARTMARKING DETAIL 聳
FZT591
FZT491
B
E
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector Cut-Off
Current
Emitter Cut-Off Current
I
CBO
I
EBO
MIN.
80
60
5
100
100
100
0.25
0.5
1.1
1.0
100
100
80
30
150
10
300
MHz
pF
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
TYP.
MAX.
VALUE
80
60
5
2
1
200
2
-55 to +150
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=60V
V
EB
=4V
V
CES
=60V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, V
CE
=5V*
I
C
=1mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
= 2A, V
CE
=5V*
I
C
=50mA, V
CE
=10V,
f =100MHz
V
CB
=10V, f=1MHz
UNIT
V
V
V
A
A
mA
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
Collector-Emitter Cut-Off I
CES
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
碌
s.
For typical characteristics graphs see FMMT491 datasheet
3 - 189
1
