SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 聳 JANUARY 1996
FEATURES
* 400 Volt V
CEO
FZT458
C
COMPLEMENTARY TYPE 聳
PARTMARKING DETAIL 聳
FZT558
FZT458
B
E
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
Collector Cut-Off Currents
Emitter Cut-Off Current
Emitter Saturation Voltages
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency
Collector-Base
Breakdown Voltage
Switching times
V
BE(on)
h
FE
f
T
C
obo
t
on
t
off
100
100
15
50
5
135 Typical
2260 Typical
MIN.
400
400
5
100
100
100
0.2
0.5
0.9
0.9
300
MHz
pF
ns
ns
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
MAX.
VALUE
400
400
5
300
1
200
2
-55 to +150
UNIT
V
V
V
nA
nA
nA
V
V
V
V
UNIT
V
V
V
mA
A
mA
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
CONDITIONS.
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=320V
V
CE
=320V
V
EB
=4V
I
C
=20mA, I
B
=2mA*
I
C
=50mA, I
B
=6mA*
I
C
=50mA, I
B
=5mA*
I
C
=50mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
I
C
=50mA, V
CC
=100V
I
B1
=5mA, I
B2
=-10mA
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet
3 - 187
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