SOT223 PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 4 聳 JUNE 1996
PARTMARKING DETAIL 聳
7
FZT4403
FZT4403
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter Base
Breakdown Voltage
Base Cut-off Current
Collector-Emitter
Cut-off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
SYMBOL MIN.
V
(BR)CBO
-40
V
(BR)CEO
V
(BR)EBO
I
BEX
I
CEX
V
CE(sat)
V
BE(sat)
h
FE
-0.75
30
60
100
100
20
200
8.5
-40
-5
-0.1
-0.1
-0.4
-0.75
-0.95
-1.3
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
碌
A
碌
A
VALUE
-40
-40
-5
-600
1.5
-55 to +150
CONDITIONS.
I
C
=-0.1mA
I
C
=-1mA
I
E
=-0.1mA
UNIT
V
V
V
mA
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
V
CE
=-35V, V
EB(OFF)
=-0.4V
=-0.4V
V
CE
=-35V, V
EB(OFF)
I
C
=-150mA, I
B
=-15mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-150mA, I
B
=-15mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-0.1mA, V
CE
=-1V
I
C
=-1mA, V
CE
=-1V
I
C
=-10mA, V
CE
=-1V
I
C
=-150mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
V
V
V
V
300
MHz
pF
pF
Transition Frequency
Output Capacitance
f
T
C
obo
I
C
=-50mA, V
CE
=-5V
f=100MHz
V
CB
=-10V, f=100KHz
I
E
=0
I
C
=0, f=100kHZ
30
Input Capacitance
C
ibo
*Measured under pulsed conditions. Pulse width=300
碌
s.
3 - 300
1
