FZT3019
FZT3019
NPN General Purpose Amplifier
鈥?This device is designed for general purpose medium power amplifiers
and switches requiring collector currents to 500 mA and collector
voltages up to 80 V.
鈥?Sourced from process 12.
4
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings*
T
a
=25擄C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
Parameter
Ratings
80
140
7.0
7.0
-55 ~ 150
Units
V
V
V
mA
擄C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25擄C unless otherwise noted
Symbol
Off Characteristics
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
h
FE
Parameter
Test Condition
I
C
= 30 mA, I
B
= 0
I
C
= 100
碌A(chǔ),
I
E
= 0
I
E
= 100
碌A(chǔ),
I
C
= 0
V
CB
= 90 V, I
E
= 0
V
CB
= 90 V, I
E
= 0, T
a
= 150擄C
Min.
80
40
7.0
0.01
10
0.01
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 1.0 A, V
CE
= 10 V
I
C
= 500 mA, I
B
= 15 V
I
C
= 1.0 A, I
B
= 50 V
I
C
= 10 mA, I
B
= 15 V
I
C
= 50 mA, V
CE
= 10 V, f = 20 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
BE
= 10 V, I
E
= 0, f = 1.0 MHz
I
C
= 50 mA, V
CE
= 10 V,
f = 20 MHz
I
C
= 10 mA, V
CB
= 10 V, f = 4.0 MHz
I
C
= 100 mA, V
CE
= 10 V,
R
S
= 1.0k鈩? f = 1.0KHz
80
100
12
60
400
400
4.0
pS
dB
50
90
100
50
15
Max.
Units
V
V
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
Collector-Emitter Sustaining Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter-Cutoff Current
DC Current Gain
On Characteristics
300
V
CE(sat)
V
BE(sat)
f
T
C
cob
C
ibo
h
fe
rb鈥機c
NF
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain - Bandwidth Product
Collector-Base Capacitance
Input Capacitance
Small Signal current Gain
Collector Base Time Constant
Noise Figure
0.2
0.5
1.1
V
V
V
MHz
pF
pF
Small Signal Characteristics
* Pulse Test: Pulse Width
鈮?/div>
300
碌s,
Duty Cycle
鈮?/div>
2.0%
漏2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
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