Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R12 KS4
Vorl盲ufige Daten
Preliminary data
H枚chstzul盲ssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
2
t - value, Diode
Isolations-Pr眉fspannung
insulation test voltage
t
P
= 1 ms
T
C
= 80擄C
T
C
= 25 擄C
t
P
= 1 ms, T
C
= 80擄C
V
CES
1200
V
I
C,nom.
I
C
I
CRM
800
1200
1600
A
A
A
T
C
=25擄C, Transistor
P
tot
6,9
kW
V
GES
+/- 20V
V
I
F
800
A
I
FRM
1600
A
V
R
= 0V, t
p
= 10ms, T
Vj
= 125擄C
It
2
185.000
As
2
RMS, f = 50 Hz, t = 1 min.
V
ISOL
2.500
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter S盲ttigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannunggate threshold voltage
Eingangskapazit盲t
input capacitance
R眉ckwirkungskapazit盲t
reverse transfer capacitance
Gateladung
gate charge
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 800 A, V
GE
= 15V, Tvj = 25擄C
I
C
= 800 A, V
GE
= 15V, T
vj
= 125擄C
I
C
= 32 mA, V
CE
= V
GE
, T
vj
= 25擄C
V
GE(th)
V
CE sat
min.
-
-
4,5
typ.
3,00
3,60
5,5
max.
-
-
6,5
V
V
V
f = 1MHz,T
vj
= 25擄C,V
CE
= 25V, V
GE
= 0V
C
ies
-
52
-
nF
f = 1MHz,T
vj
= 25擄C,V
CE
= 25V, V
GE
= 0V
C
res
-
t.b.d.
-
nF
V
GE
= -15V ... + 15V, V
CE
= 600V
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25擄C
V
CE
= 1200V, V
GE
= 0V, T
vj
= 125擄C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25擄C
Q
G
I
CES
-
-
-
8,4
t.b.d.
t.b.d.
-
-
-
-
400
碌C
碌A(chǔ)
mA
nA
I
GES
-
prepared by: R. J枚rke
approved by: Jens Thurau
date of publication : 2000-06-14
revision: 1
1 (9)
FZ800R12KS4, preliminary.xls
15.06.00