Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ2400R17KF6C B2
H枚chstzul盲ssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I t - value, Diode
Isolations-Pr眉fspannung
insulation test voltage
2
V
CES
T
C
= 80 擄C
T
C
= 25 擄C
t
P
= 1 ms, T
C
= 80擄C
I
C,nom.
I
C
I
CRM
1700
2400
3800
4800
V
A
A
A
T
C
=25擄C, Transistor
P
tot
19,2
kW
V
GES
+/- 20V
V
I
F
2400
A
tp = 1 ms
I
FRM
4800
A
V
R
= 0V, t
p
= 10ms, T
Vj
= 125擄C
2
It
1500
kA
2
s
RMS, f = 50 Hz, t = 1 min.
V
ISOL
4
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter S盲ttigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazit盲t
input capacitance
R眉ckwirkungskapazit盲t
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
I
C
= 2400A, V
GE
= 15V, T
vj
= 25擄C
I
C
= 2400A, V
GE
= 15V, T
vj
= 125擄C
I
C
= 190mA, V
CE
= V
GE
, T
vj
= 25擄C
V
GE(th)
4,5
V
CE sat
min.
typ.
2,6
3,1
5,5
max.
3,1
3,6
6,5
V
V
V
V
GE
= -15V ... +15V
Q
G
29
碌C
f = 1MHz,T
vj
= 25擄C,V
CE
= 25V, V
GE
= 0V
C
ies
160
nF
f = 1MHz,T
vj
= 25擄C,V
CE
= 25V, V
GE
= 0V
V
CE
= 1700V, V
GE
= 0V, T
vj
= 25擄C
V
CE
= 1700V, V
GE
= 0V, T
vj
= 125擄C
V
CE
= 0V, V
GE
= 20V, T
vj
= 25擄C
C
res
I
CES
8
0,06
30
4,5
240
400
nF
mA
mA
nA
I
GES
prepared by: Alfons Wiesenthal
approved by: Christoph L眉bke; 10.11.2000
date of publication: 10.11.2000
revision: serie
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FZ2400R17KF6C B2
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