FYV0203S/DN/DP/DS
FYV0203S/DN/DP/DS
3
3
Connection Diagram
3
3
YB1
2
1
1
2
1
FYV0203S
3
1
FYV0203DP 2
3
Marking
FYV0203S = YB1
FYV0203DN = YB2
FYV0203DP = YB3
FYV0203DS = YB4
SOT-23
1 FYV0203DN 2
1 FYV0203DS 2
Schottky Diode
Absolute Maximum Ratings
T
A
=25擄C unless otherwise noted
擄
Symbol
V
RRM
I
F(AV)
I
FSM
T
STG
T
J
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
Pulse Width = 1.0s
Storage Temperature Range
Operating Junction Temperature
Value
30
0.2
0.6
-65 to +150
150
Units
V
A
A
擄C
擄C
Thermal Characteristics
Symbol
R
胃JA
Parameter
Thermal Resistance, Junction to Ambient
Value
430
Units
擄C/W
Electrical Characteristics
T
A
=25擄C unless otherwise noted
擄
Symbol
V
F
*
Parameter
Forward Voltage Drop
I
F
= 0.1mA
I
F
= 1mA
I
F
= 10mA
I
F
= 30mA
I
F
= 100mA
I
F
= 200mA
Reverse Current
@ Rated V
R
Total Capacitance
V
R
= 1V , f = 1.0 MHz
Reverse Recovery Time
I
F
= I
R
= 10mA, I
RR
= 1mA, R
L
= 100鈩?/div>
T
A
= 25
擄C
T
A
= 125
擄C
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
210
270
340
390
485
600
0.2
130
-
-
Max.
240
320
400
500
800
1000
uA
2
-
pF
10
ns
5
Units
mV
I
R
*
C
T
t
rr
* Pulse Test: Pulse Width=300碌s, Duty Cycle=2%
漏2001 Fairchild Semiconductor Corporation
Rev. A, September 2001
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