FYA3010DN Schottky Barrier Rectifier
July 2005
FYA3010DN
Schottky Barrier Rectifier
Features
鈥?Low forward voltage drop
鈥?High frequency properties and switching speed
鈥?Guard ring for over-voltage protection
Applications
鈥?Switched mode power supply
鈥?Freewheeling diodes
TO-3P
1 2 3
Marking: Y3010DN
(per diode) T
a
= 25擄C unless otherwise noted
1. Anode 2.Cathode 3. Anode
Absolute Maximum Ratings
Symbol
V
RRM
V
R
I
F(AV)
I
FSM
T
J,
T
STG
Parameter
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
@ T
C
= 135擄C
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
= 25擄C unless otherwise noted
Value
100
100
30
250
- 65 to +150
Units
V
V
A
A
擄C
Thermal Characteristics
T
Symbol
R
胃JC
R
胃JC
R
胃JC
a
Parameter
Maximum Thermal Resistance, Junction to Case (per diode)
Maximum Thermal Resistance, Junction to Case (per PKG)
Maximum Thermal Resistance, Case to Heatsink
(per diode) T
a
= 25擄C unless otherwise noted
Value
0.78
0.48
0.2
Units
擄C/W
擄C/W
擄C/W
Electrical Characteristics
Symbol
V
FM *
Parameter
Maximum Instantaneous Forward Voltage
I
F
= 15A
I
F
= 15A
I
F
= 30A
I
F
= 30A
Maximum Instantaneous Reverse Current
@ rated V
R
T
C
= 25
擄C
T
C
= 125
擄C
T
C
= 25
擄C
T
C
= 125
擄C
T
C
= 25
擄C
T
C
= 125
擄C
Value
0.85
0.67
1.05(Typ.)
0.80
1
20
Units
V
I
RM *
mA
* Pulse Test: Pulse Width=300碌s, Duty Cycle=2%
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FYA3010DN Rev. A
1
2
3
4
