NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 1 聳 SEPT 93
FEATURES
* 300 Volt V
CEO
APPLICATIONS
* Telephone dialler circuits
FXTA42
B
C
E
REFER TO MPSA42 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
300
300
6
500
680
-55 to +175
UNIT
V
V
V
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
300
300
6
0.1
0.1
0.5
0.9
25
40
40
50
6
3-64
MHz
pF
TYP.
MAX.
UNIT
V
V
V
碌
A
碌
A
CONDITIONS.
I
C
=100
碌
A, I
E
=0
I
C
=1mA, I
B
=0*
I
E
=100
碌
A, I
C
=0
V
CB
=200V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=20mA, I
B
=2mA
I
C
=20mA, I
B
=2mA
I
C
=1mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V*
I
C
=30mA, V
CE
=10V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
V
BE(sat)
V
V
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo
1
