PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 聳 FEB 94
FEATURES
* 25 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
= 1 Watt
FXT749
B
C
E
REFER TO ZTX749 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
-35
-25
-5
-6
-2
1
-55 to +200
UNIT
V
V
V
A
A
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
-35
-25
-5
-0.1
-10
-0.1
-0.12
-0.23
-0.9
-0.8
70
100
75
15
100
200
200
150
50
160
100
-0.3
-0.5
-1.25
-1
300
MHz
pF
TYP.
MAX.
UNIT
V
V
V
碌
A
碌
A
碌
A
CONDITIONS.
I
C
=-100
碌
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
碌
A, I
C
=0
V
CB
=-30V
V
CB
=-30V,
T
amb
=100擄C
V
EB
=-4V, I
E
=0
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-1A, I
B
=-100mA*
IC=-1A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
I
C
=-100mA, V
CE
=-5V
f=100MHz
V
CB
=-10V, f=1MHz
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
V
V
V
V
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
