NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 聳 MARCH 94
FEATURES
* 80 Volt V
CEO
* Gain of 2K at I
C
=1 Amp
* P
tot
= 1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
* Replacement of TO126 and TO220 packages
REFER TO ZTX603 FOR GRAPHS
FXT603
B
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
MIN.
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
E-Line
TO92 Compatible
VALUE
100
80
10
4
1
1
-55 to +200
UNIT
CONDITIONS.
UNIT
V
V
V
A
A
W
擄C
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
100
80
10
0.01
10
0.1
10
1.0
1.0
1.8
1.7
2000
5000
2000
500
150
V
V
V
碌
A
碌
A
碌
A
碌
A
I
C
=100
碌
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
碌
A, I
C
=0
V
CB
=80V, I
E
=0
V
CB
=80V,
T
amb
=100擄C
V
EB
=8V, I
C
=0
V
CES
=80V
I
C
=0.4A, I
B
=0.4mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
=1mA*
IC=1A, V
CE
=5V*
I
C
=50mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Emitter Cut-Off Current I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
V
V
V
V
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
f
T
100K
MHz
I
C
=100mA, V
CE
=10V
f=20MHz
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
