NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 聳 MARCH 94
FEATURES
* 160 Volt V
CEO
* Gain of 5K at I
C
=1 Amp
* P
tot
= 1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
* Replacement of TO126 and TO220 packages
REFER TO ZTX601B FOR GRAPHS
FXT601B
B
C
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
180
160
10
4
1
1
-55 to +200
UNIT
V
V
V
A
A
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
180
160
10
0.01
10
0.1
10
0.75
0.85
1.7
1.5
5K
10K
5K
150
10K
20K
10K
250
1.1
1.2
1.9
1.7
100K
MHz
TYP.
MAX.
UNIT
V
V
V
碌
A
碌
A
碌
A
碌
A
CONDITIONS.
I
C
=100
碌
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
碌
A, I
C
=0
V
CB
=160V
V
CB
=160V,
T
amb
=100擄C
V
EB
=8V, I
C
=0
V
CES
=160V
I
C
=0.5A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
IC=1A, V
CE
=5V*
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=100mA, V
CE
=10V
f=20MHz
Emitter Cut-Off Current I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
V
V
V
V
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
f
T
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
