NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 聳 SEPT 93
FEATURES
* 45 Volt V
CEO
* 1 Amp continuous current
* P
tot
=1 Watt
FXT450
B
C
E
REFER TO ZTX450 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
60
45
5
2
1
1
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
擄C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
MIN.
60
45
5
0.1
0.1
0.25
1.1
100
15
150
15
3-31
pF
300
TYP.
MAX.
UNIT
V
V
V
碌
A
碌
A
CONDITIONS.
I
C
=100
碌
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
碌
A, I
C
=0
V
CB
=45V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=150mA, I
B
=15mA*
I
C
=150mA, I
B
=15mA*
I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
V
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo
1
