PNP SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 聳 SEPTEMBER 94
FEATURES
* 60 Volt V
CEO
* Fast switching
FXT2907A
B
C
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
-60
-60
-5
-600
500
-55 to +175
UNIT
V
V
V
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Emitter
Cut-Off Current
Collector Cut-Off
Current
Base Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
CBO
I
B
V
CE(sat)
V
BE(sat)
h
FE
75
100
100
100
50
200
MIN.
-60
-60
-5
-50
-10
-10
-50
-0.4
-1.6
-1.3
-2.6
TYP.
MAX.
V
V
V
nA
nA
nA
V
V
V
V
UNIT CONDITIONS.
I
C
=-10
碌
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-10
碌
A, I
C
=0
V
CE
=-30V, V
BE
=-0.5V
V
CB
=-50V, I
E
=0
V
CB
=-50V, I
E
=0, T
amb
=150擄C
V
CE
=-30V, V
BE
=-0.5V
I
C
=-150mA, I
B
=-15mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-150mA, I
B
=-15mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-0.1mA, V
CE
=-10V
I
C
=-1mA, V
CE
=-10V
I
C
=-10mA, V
CE
=-10V
I
C
=-150mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-10V*
MHz
I
C
=-50mA, V
CE
=-20V
f=100MHz
碌
A
300
Transition
Frequency
f
T
*Measured under pulsed conditions. Pulse width=300ms. Duty cycle
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