Ordering number:EN5387
FX901
DC-DC Converter Applications
Features
路 Composite type with a PNP transistor and a 2.5V
drive N-channel MOSFET with a built-in low
forward-voltage Schottky barrier diode faciliteting
high-density mounting.
PNP Epitaxial Planar Silicon Transistor
N-Channel MOS Silicon FET
Silicon Schottky Barrier Diode
Package Dimensions
unit:mm
2133
[FX901]
Electrical Connection
1:Base
2:Emitter
3:Anode, Source
4:Gate
5, 6:Common
(Collector, Cathode, Drain)
SANYO:XP5
(Bottom view)
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Allowable Power Dissipation
Total Power Dissipation
Storage Temperature
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Junction Temperature
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Channel Temperature
[SBD]
Average Rectified Current
IO
500
mA
VDSS
VGSS
ID
IDP
Tch
PW
鈮?/div>
10碌s, duty cycle
鈮?/div>
1%
11
鹵10
2
8
150
V
V
A
A
藲C
Symbol
P
P
PT
Tstg
VCBO
VCEO
VEBO
IC
ICP
IB
Tj
Tc=25藲C, 1 unit
Conditions
Mounted on ceramic board
Mounted on ceramic board
(750mm
2
脳0.8mm)
(750mm
2
脳0.8mm)
1 unit
Ratings
8
1.5
2
鈥?5 to +150
鈥?5
鈥?1
鈥?
鈥?
鈥?
鈥?00
150
Unit
W
W
W
藲C
V
V
V
A
A
mA
藲C
路 Marking:901
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/32996YK (KOTO) TA-0622 No.5387-1/5
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