Ordering number:EN4889
FX606
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
路 Composite type composed of two low ON-resistance
N-channel MOSFET chips for ultrahigh-speed
switching and low-voltage drive.
路 Facilitates high-density mounting.
路 The FX606 is formed with two chips, each being
equivalent to the 2SK1470, placed in one package.
路 Matched pair characteristics.
Package Dimensions
unit:mm
2120
[FX606]
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
SANYO:XP6
(Bottom view)
Switching Time Test Circuit
Electrical Connection
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
(Top view)
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PD
PT
Tch
Tstg
PW
鈮?/div>
10碌s, duty cycle
鈮?/div>
1%
Tc=25藲C, 1 unit
Mounted on ceramic board (750mm
2
脳0.8mm)
1 unit
Mounted on ceramic board (750mm
2
脳0.8mm)
Conditions
Ratings
60
鹵15
2
8
6
1.5
2
150
鈥?5 to +150
Unit
V
V
A
A
W
W
W
藲C
藲C
路 Marking:606
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095MO(KOTO) TA-0112 No.4889-1/4
1
2
3
4
